1 June 2015 Generation-recombination processes in InGaAs/GaAs heterostructures with one-dimensional nanostructures
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Proceedings Volume 9519, Nanotechnology VII; 95190W (2015); doi: 10.1117/12.2178684
Event: SPIE Microtechnologies, 2015, Barcelona, Spain
Abstract
Structures with one-dimensional quantum objects in intermediate band are promising for their application in solar cells and photodetectors. We present analysis of dark current-voltage characteristics, photo-voltage decay and photo-voltage spectra for this structures in comparison with reference GaAs based structures. It has been shown that InGaAs quantum wires make a significant influence on J-V dependences and photo-voltage spectra. InGaAs QWRS are additional recombination centers and transitions between them dominated over by Shockley-Read-Hall recombination at low bias. The InGaAs/GaAs sample shows a significantly higher photo-voltage in the spectral range of 1.25-1.37 eV, as compared to a reference GaAs p-n junction, due to intermediate band transitions in the quantum wires.
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Marianna Kovalova, Serhiy Kondratenko, Artem Yakovlev, Colin Furrow, Vasyl Kunets, Morgan Ware, Gregory Salamo, "Generation-recombination processes in InGaAs/GaAs heterostructures with one-dimensional nanostructures", Proc. SPIE 9519, Nanotechnology VII, 95190W (1 June 2015); doi: 10.1117/12.2178684; http://dx.doi.org/10.1117/12.2178684
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KEYWORDS
Gallium arsenide

Indium gallium arsenide

Solar cells

Heterojunctions

Quantum dots

Quantum efficiency

Nanostructures

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