1 June 2015 Generation-recombination processes in InGaAs/GaAs heterostructures with one-dimensional nanostructures
Author Affiliations +
Abstract
Structures with one-dimensional quantum objects in intermediate band are promising for their application in solar cells and photodetectors. We present analysis of dark current-voltage characteristics, photo-voltage decay and photo-voltage spectra for this structures in comparison with reference GaAs based structures. It has been shown that InGaAs quantum wires make a significant influence on J-V dependences and photo-voltage spectra. InGaAs QWRS are additional recombination centers and transitions between them dominated over by Shockley-Read-Hall recombination at low bias. The InGaAs/GaAs sample shows a significantly higher photo-voltage in the spectral range of 1.25-1.37 eV, as compared to a reference GaAs p-n junction, due to intermediate band transitions in the quantum wires.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marianna Kovalova, Marianna Kovalova, Serhiy Kondratenko, Serhiy Kondratenko, Artem Yakovlev, Artem Yakovlev, Colin Furrow, Colin Furrow, Vasyl Kunets, Vasyl Kunets, Morgan Ware, Morgan Ware, Gregory Salamo, Gregory Salamo, } "Generation-recombination processes in InGaAs/GaAs heterostructures with one-dimensional nanostructures", Proc. SPIE 9519, Nanotechnology VII, 95190W (1 June 2015); doi: 10.1117/12.2178684; https://doi.org/10.1117/12.2178684
PROCEEDINGS
10 PAGES


SHARE
Back to Top