1 June 2015 Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole
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Abstract
This paper reports the growths of InGaN-based light-emitting diodes (LEDs) on the patterned sapphire substrates (PSSs) with enlarging the diameter of hexagonal hole can reduce the related quantum-confined Stark effect (QCSE) within multiple-quantum wells (MQWs), resulting in that the PL relative intensity is enhanced by up to 95% as compared to the conventional one.
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Yen-Pu Chen, Yen-Pu Chen, Vincent Su, Vincent Su, Ming-Lun Lee, Ming-Lun Lee, Yao-Hong You, Yao-Hong You, Po-Hsun Chen, Po-Hsun Chen, Ray-Ming Lin, Ray-Ming Lin, Chieh-Hsiung Kuan, Chieh-Hsiung Kuan, } "Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole", Proc. SPIE 9519, Nanotechnology VII, 95190X (1 June 2015); doi: 10.1117/12.2178768; https://doi.org/10.1117/12.2178768
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