1 June 2015 Atomic layer deposition of Al2O3 on NF3-pre-treated graphene
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Graphene has been considered for a variety of applications including novel nanoelectronic device concepts. However, the deposition of ultra-thin high-k dielectrics on top of graphene has still been challenging due to graphene's lack of dangling bonds. The formation of large islands and leaky films has been observed resulting from a much delayed growth initiation. In order to address this issue, we tested a pre-treatment with NF3 instead of XeF2 on CVD graphene as well as epitaxial graphene monolayers prior to the Atomic Layer Deposition (ALD) of Al2O3. All experiments were conducted in vacuo; i. e. the pristine graphene samples were exposed to NF3 in the same reactor immediately before applying 30 (TMA-H2O) ALD cycles and the samples were transferred between the ALD reactor and a surface analysis unit under high vacuum conditions. The ALD growth initiation was observed by in-situ real-time Spectroscopic Ellipsometry (irtSE) with a sampling rate above 1 Hz. The total amount of Al2O3 material deposited by the applied 30 ALD cycles was cross-checked by in-vacuo X-ray Photoelectron Spectroscopy (XPS). The Al2O3 morphology was determined by Atomic Force Microscopy (AFM). The presence of graphene and its defect status was examined by in-vacuo XPS and Raman Spectroscopy before and after the coating procedure, respectively.
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Marcel Junige, Marcel Junige, Tim Oddoy, Tim Oddoy, Rositsa Yakimova, Rositsa Yakimova, Vanya Darakchieva, Vanya Darakchieva, Christian Wenger, Christian Wenger, Grzegorz Lupina, Grzegorz Lupina, Julia Kitzmann, Julia Kitzmann, Matthias Albert, Matthias Albert, Johann W. Bartha, Johann W. Bartha, } "Atomic layer deposition of Al2O3 on NF3-pre-treated graphene", Proc. SPIE 9519, Nanotechnology VII, 951915 (1 June 2015); doi: 10.1117/12.2181242; https://doi.org/10.1117/12.2181242

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