4 March 2015 TCAD simulations for a novel single-photon avalanche diode
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Proceedings Volume 9521, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I; 95210C (2015) https://doi.org/10.1117/12.2087264
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held August-October 2014, 2014, China, China
Abstract
A single-photon avalanche diode (SPAD) device with P+-SEN junction, and a low concentration of N-type doping circular virtual guard-ring was presented in this paper. SEN layer of the proposed SPAD has high concentration of N-type doping, causing the SPAD low breakdown voltage (~14.26 V). What’s more, an efficient and narrow (about 2μm) guard-ring of the proposed SPAD not only can withstand considerably higher electric fields for preventing edge breakdown, but also offers a little increment in fill factor compared with existing SPADs due to its small area. In addition, some Silvaco TCAD simulations have been done and verify characteristics and performance of the design in this work.
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Xiangliang Jin, Xiangliang Jin, Jia Yang, Jia Yang, Hongjiao Yang, Hongjiao Yang, Lizhen Tang, Lizhen Tang, Weihui Liu, Weihui Liu, } "TCAD simulations for a novel single-photon avalanche diode ", Proc. SPIE 9521, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I, 95210C (4 March 2015); doi: 10.1117/12.2087264; https://doi.org/10.1117/12.2087264
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