4 March 2015 Temperature characteristic of 808nm VCSELs with large aperture
Author Affiliations +
Proceedings Volume 9521, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I; 95210L (2015) https://doi.org/10.1117/12.2087562
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held August-October 2014, 2014, China, China
Abstract
In order to study the output characteristics of 808nm vertical cavity surface emitting laser(VCSEL) with large aperture at different temperature, 808nm VCSEL with 500μm emitting diameter are fabricated with Reticular Electrode Structure(RES). Lasing wavelength, optical power and the threshold current are measured by changing the temperature of heat sink. And an output power of 0.42W is achieved at 1.3A at room temperature under continuous wave operation. The central wavelength is 803.32nm, and the full width at half maximum is 0.16nm, the temperature shift is 0.06nm/℃, the thermal resistance is 0.098℃/mW. The testing results show that 808nm VCSEL with large aperture is good temperature characteristic.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuan Feng, Yuan Feng, Dawei Feng, Dawei Feng, Yongqin Hao, Yongqin Hao, Yong Wang, Yong Wang, Changling Yan, Changling Yan, Peng Lu, Peng Lu, Yang Li, Yang Li, } "Temperature characteristic of 808nm VCSELs with large aperture", Proc. SPIE 9521, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I, 95210L (4 March 2015); doi: 10.1117/12.2087562; https://doi.org/10.1117/12.2087562
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

Fabrication of the new structure 980nm VCSEL
Proceedings of SPIE (November 07 2016)
High-power VCSELs single devices and 2-D arrays
Proceedings of SPIE (December 21 2005)
808-nm high-power semiconductor laser arrays
Proceedings of SPIE (August 19 1998)
980 nm bottom emitting VCSEL with an output power of...
Proceedings of SPIE (January 31 2005)
High power VCSEL device with periodic gain active region
Proceedings of SPIE (November 19 2007)

Back to Top