Research on silicon microchannel arrays oxide insulation technology

Ke-xin Wu; Qingduo Duanmu; Guozheng Wang; Ji-kai Yang; Yang-qiang Kou

doi:10.1117/12.2175992

4 March 2015 Research on silicon microchannel arrays oxide insulation technology

Ke-xin Wu, Qingduo Duanmu, Guozheng Wang, Ji-kai Yang, Yang-qiang Kou

Proceedings Volume 9521, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I; 95210Z (2015) https://doi.org/10.1117/12.2175992
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held August-October 2014, 2014, China, China

Abstract

Silicon microchannel plates (Si-MCP) is widely used in the photomultiplier, night vision, X- ray intensifier and other areas. In order to meet the requirements of high voltage electron multiplier, Si-MCP need to prepare a layer of silicon dioxide in the microchannel to improve the insulating properties. There are many methods for preparing SiO₂ layer, such as thermal growth, magnetron sputtering method and chemical vapor deposition etc. The thermal oxidation method is often used for preparation of insulating layer that it grows film thickness uniformity, compact structure, simple process and so on. There will be bending deformation phenomenon of silicon microchannel arrays in high temperature oxidation process. The warpage of Si-MCP has brought great for difficulties of subsequent processing. Silicon crystals has the properties of plastic deformation at high temperature, this article take full advantage of this properties by which the already bending deformation of silicon microchannel arrays can be restored to flat.

Citation Download Citation

Ke-xin Wu, Qingduo Duanmu, Guozheng Wang, Ji-kai Yang, and Yang-qiang Kou "Research on silicon microchannel arrays oxide insulation technology", Proc. SPIE 9521, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I, 95210Z (4 March 2015); https://doi.org/10.1117/12.2175992

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