Paper
4 March 2015 A low noise high readout speed 512×128 ROIC for shortwave InGaAs FPA
SongLei Huang, Zhangcheng Huang, Yu Chen, Hengjing Tang, Jiaxiong Fang
Author Affiliations +
Proceedings Volume 9521, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I; 95211J (2015) https://doi.org/10.1117/12.2178127
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held August-October 2014, 2014, China, China
Abstract
A low noise high readout speed 512×128 readout Integrated circuit (ROIC) based on capacitance trans-impedance amplifier (CTIA) is designed in this paper. The ROIC is flip-chip bonded with Indium bumps to InGaAs detectors which cutoff wavelength is 1.7μm, as a hybrid structure (InGaAs FPA). The ROIC with 30μm pixel pitch and 50fF integrated capacitance, is fabricated in 0.5μm DPTM CMOS process. The results show that output noise is about 3.0E-4V which equivalent readout noise is 95e-, output voltage swing is better than 2.5V; the dynamic range of InGaAs FPA reaches 69.7dB@2ms, and the power dissipation is about 175mw. The peak detectivity of InGaAs FPA reaches 2E12cmHz1/2w-1 at 300K without TEC cooling.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
SongLei Huang, Zhangcheng Huang, Yu Chen, Hengjing Tang, and Jiaxiong Fang "A low noise high readout speed 512×128 ROIC for shortwave InGaAs FPA", Proc. SPIE 9521, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I, 95211J (4 March 2015); https://doi.org/10.1117/12.2178127
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Readout integrated circuits

Indium gallium arsenide

Staring arrays

Capacitance

Sensors

Amplifiers

Shortwaves

RELATED CONTENT


Back to Top