Investigation on the interface of polysilicon/oxide in CCD image sensors

Naiman L.; Renhao L.; Chunlin L.

doi:10.1117/12.2179155

13 April 2015 Investigation on the interface of polysilicon/oxide in CCD image sensors

Naiman L., Renhao L., Chunlin L.

Proceedings Volume 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II; 95220L (2015) https://doi.org/10.1117/12.2179155
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held August-October 2014, 2014, China, China

Abstract

The morphology of interface between polysilicon and its thermal oxide is very important for the fabrication of charge-coupled device (CCD) image sensors. Poor quality of polysilicon/oxide interface may lead to leakage current, low charge transfer efficiency, image deficiency, and then reduce the product yield and device reliability. In this paper, the effects polysilicon/oxide interface morphylogy on thermal oxide breakdown characteristics of polysilicon grown by low-pressure chemical vapor deposition (LPCVD) are studied by means of scanning electron microscopy (SEM) and electrical measurement. The breakdown characteristics of the oxide are related to the polysilicon/oxide interface smoothness. As the smoothness of polysilicon/oxide interface becomes worse, the breakdown strength of thermal oxide of the polysilicon decreases. Doping process of polysilicon remarkably affects the smoothness of polysilicon/oxide interface and the breakdown strength of the oxide. Saturated doping of polysilicon improves the polysilicon/oxide interface smoothness, so the breakdown strength of polysilicon may increase.

Citation Download Citation

Naiman L., Renhao L., and Chunlin L. "Investigation on the interface of polysilicon/oxide in CCD image sensors", Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 95220L (13 April 2015); https://doi.org/10.1117/12.2179155

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available