13 April 2015 Investigation on the interface of polysilicon/oxide in CCD image sensors
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Proceedings Volume 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II; 95220L (2015) https://doi.org/10.1117/12.2179155
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held August-October 2014, 2014, China, China
Abstract
The morphology of interface between polysilicon and its thermal oxide is very important for the fabrication of charge-coupled device (CCD) image sensors. Poor quality of polysilicon/oxide interface may lead to leakage current, low charge transfer efficiency, image deficiency, and then reduce the product yield and device reliability. In this paper, the effects polysilicon/oxide interface morphylogy on thermal oxide breakdown characteristics of polysilicon grown by low-pressure chemical vapor deposition (LPCVD) are studied by means of scanning electron microscopy (SEM) and electrical measurement. The breakdown characteristics of the oxide are related to the polysilicon/oxide interface smoothness. As the smoothness of polysilicon/oxide interface becomes worse, the breakdown strength of thermal oxide of the polysilicon decreases. Doping process of polysilicon remarkably affects the smoothness of polysilicon/oxide interface and the breakdown strength of the oxide. Saturated doping of polysilicon improves the polysilicon/oxide interface smoothness, so the breakdown strength of polysilicon may increase.
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Naiman L., Naiman L., Renhao L., Renhao L., Chunlin L., Chunlin L., "Investigation on the interface of polysilicon/oxide in CCD image sensors", Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 95220L (13 April 2015); doi: 10.1117/12.2179155; https://doi.org/10.1117/12.2179155
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