13 April 2015 Two methods for characterizing the electrical properties of InAsSb film grown by liquid phase epitaxy
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Proceedings Volume 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II; 952216 (2015) https://doi.org/10.1117/12.2179766
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held August-October 2014, 2014, China, China
Abstract
High-quality InAs1-xSbx films with x=0.06 have been successfully grown on InAs (100) substrates by liquid phase epitaxy. Two methods are used to characterize the electrical properties of InAsSb film. One is to grow InAsSb epilayer on p-type InAs substrate, which, in combination with the n-type epilayer, forms a p-n junction to prevent the parallel conduction from the substrate. The other is that both the conductive InAs substrate and the dislocation layer between InAs and InAsSb are removed completely by chemical mechanical polishing method to get InAsSb film glued onto insulating sapphire substrate. The influence of conductive InAs substrate on the electrical properties of InAsSb film is eliminated effectively.
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Yingfei Lv, Yingfei Lv, Shuhong Hu, Shuhong Hu, Yonggang Xu, Yonggang Xu, Yang Wang, Yang Wang, Guolin Yu, Guolin Yu, Ning Dai, Ning Dai, } "Two methods for characterizing the electrical properties of InAsSb film grown by liquid phase epitaxy", Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 952216 (13 April 2015); doi: 10.1117/12.2179766; https://doi.org/10.1117/12.2179766
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