13 April 2015 Surface morphology of LPE-growth GaSb quantum dots
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Proceedings Volume 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II; 95222X (2015) https://doi.org/10.1117/12.2182638
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held August-October 2014, 2014, China, China
Abstract
The self-assembled type-II GaSb quantum dots (QDs) were successfully grown on semi-insulting GaAs (100) substrate by the liquid phase epitaxy (LPE) technique with growth temperature ranging from 520 to 580 oC. The morphology of GaSb QDs including size, shape and density was investigated by atomic force microscopy measurement and scanning electron microscope measurement, respectively. The cap layer with scores of nanometers, which is characterized by Profile-system, is obtained for the photoluminescence measurement and device fabrication.
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Yang Wang, Yang Wang, Shuhong Hu, Shuhong Hu, Yingfei Lv, Yingfei Lv, Ning Dai, Ning Dai, } "Surface morphology of LPE-growth GaSb quantum dots", Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 95222X (13 April 2015); doi: 10.1117/12.2182638; https://doi.org/10.1117/12.2182638
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