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17 July 2015 High linearly polarized light emission from GaN-based LED with patterned dielectric/metal structures
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Proceedings Volume 9524, International Conference on Optical and Photonic Engineering (icOPEN 2015); 952414 (2015) https://doi.org/10.1117/12.2189257
Event: International Conference on Optical and Photonic Engineering (icOPEN2015), 2015, Singapore, Singapore
Abstract
We proposed and demonstrated an integrated high linearly polarized InGaN/GaN green LED grown on (0001) oriented sapphire with a structure of combined dielectric/metal wire grids (CDMWG). Both theoretical and experimental results show that the CDMWG can effectively loosen the requirement on the dimension of the grating, and the introduction of a low-refractive dielectric layer can further enhance both TMT and ER significantly for the GaN-type LED. An InGaN/ GaN green LED with an integrated CDMWG of 220 nm period has been fabricated, and a measured extinction ratio(ER) of higher than 20 dB and TMT of 65% within an angle of ±40° is obtained directly from a InGaN/GaN LED.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Miao Wang, Bing Cao, Fuyang Xu, Jingpei Hu, Jianfeng Wang, Ke Xu, and Chinhua Wang "High linearly polarized light emission from GaN-based LED with patterned dielectric/metal structures", Proc. SPIE 9524, International Conference on Optical and Photonic Engineering (icOPEN 2015), 952414 (17 July 2015); https://doi.org/10.1117/12.2189257
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