22 June 2015 Full-field and contact-less topography of nanometric thin films based on multiwavelength interferometry
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This paper discusses a method to measure the thickness of thin layers deposited on a reflective substrate. A Michelson type interferometer with three wavelengths produces color interferences. A color sensor records the tint that is produced. The color interferences are approximated by a model based on the measurement of the laser intensities obtained with the reference mirror only. An iterative process leads to unambiguous algorithmic convergence and high accuracy thickness measurement. This method is simple, robust, compact, and single shot. The method does not need for angular scanning over the field of measurement (about 75mm2). The measurement on the surface yields a histogram of the thickness distribution and there is no requirement for any reference points (e.g. no need to make a groove or a walk on the layer). A thickness measurement performance of 50nm was demonstrated for homogenous polymer films deposited on silicon wafer. Set-up and digital image processing are discussed.
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P. Picart, P. Picart, M. Malek, M. Malek, J. Garcia-Sucerquia, J. Garcia-Sucerquia, R. Moalla, R. Moalla, M. Edely, M. Edely, N. Delorme, N. Delorme, J.-F. Bardeau, J.-F. Bardeau, } "Full-field and contact-less topography of nanometric thin films based on multiwavelength interferometry", Proc. SPIE 9525, Optical Measurement Systems for Industrial Inspection IX, 952508 (22 June 2015); doi: 10.1117/12.2184631; https://doi.org/10.1117/12.2184631

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