22 June 2015 Wafer warpage characterization measurement with modified fringe reflection method
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We have demonstrated a modified fringe reflection method to compensate the warpage measurement errors caused by the height difference between optical reference mirror and wafer sample surface. We have used a linearity analysis approach to obtain the parabolic height errors for a 4-inch sapphire wafer warpage measurement, which is around 1.48 μm of 100 μm height difference. The experimental results shows the warp discrepancy of 6-inch sapphire wafer is less than 1 μm compared with the reference Tropel instrument.
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Po-Yi Chang, Po-Yi Chang, Yi-Sha Ku, Yi-Sha Ku, "Wafer warpage characterization measurement with modified fringe reflection method", Proc. SPIE 9525, Optical Measurement Systems for Industrial Inspection IX, 952528 (22 June 2015); doi: 10.1117/12.2184699; https://doi.org/10.1117/12.2184699


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