14 July 2015 Numerical investigation of temperature field Induced by dual wavelength lasers in sub-microsecond laser annealing technology for insulated gate bipolar transistor
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Abstract
To enhance the performance of the Insulated Gate Bipolar Transistor (IGBT), sub-microsecond laser annealing (LA) is propitious to achieve maximal dopant activation with minimal diffusion. In this work, two different lasers are used as annealing resource: a continuous 808 nm laser with larger spot is applied to preheat the wafer and another sub-microsecond pulsed 527 nm laser is responsible to activate the dopant. To optimize the system’s performance, a physical model is presented to predict the thermal effect of two laser fields interacting on wafer. Using the Finite-Element method (FEM), we numerically investigate the temperature field induced by lasers in detail. The process window corresponding to the lasers is also acquired which can satisfy the requirements of the IGBT’s annealing.
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GuoDong Cui, GuoDong Cui, Mingying Ma, Mingying Ma, Fan Wang, Fan Wang, Gang Sun, Gang Sun, Yanping Lan, Yanping Lan, Wen Xu, Wen Xu, } "Numerical investigation of temperature field Induced by dual wavelength lasers in sub-microsecond laser annealing technology for insulated gate bipolar transistor", Proc. SPIE 9532, Pacific Rim Laser Damage 2015: Optical Materials for High-Power Lasers, 953223 (14 July 2015); doi: 10.1117/12.2186011; https://doi.org/10.1117/12.2186011
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