4 May 2015 Anisotropic study of thermal stresses of (110) Silicon induced by millisecond laser
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Proceedings Volume 9543, Third International Symposium on Laser Interaction with Matter; 954307 (2015) https://doi.org/10.1117/12.2181970
Event: Third International Symposium on Laser Interaction with Matter, 2014, Jiangsu, China
Abstract
A 3D numerical model has been built to investigate anisotropic thermal stresses of (110) silicon induced by millisecond laser. The 12 slip systems resolved shear stress field of the silicon was obtained by using the FEM. The excess resolved shear stress field is identified. comparing to the experiment of the millisecond irradiating (110) PIN photodiode, we conclude that the thermal slips are introduced duo to the anisotropic thermal stresses of silicon surpassed the critical yield stress and brittle cracks are introduced due to the initiation points offered by the thermal slips which will reduce the fracture strength greatly. These thermal slips and brittle cracks increase the dark current of the photodiode greatly.
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Zewen Li, Zewen Li, Jie Zhou, Jie Zhou, Hongchao Zhang, Hongchao Zhang, Zhonghua Shen, Zhonghua Shen, Jian Lu, Jian Lu, Xiaowu Ni, Xiaowu Ni, } "Anisotropic study of thermal stresses of (110) Silicon induced by millisecond laser", Proc. SPIE 9543, Third International Symposium on Laser Interaction with Matter, 954307 (4 May 2015); doi: 10.1117/12.2181970; https://doi.org/10.1117/12.2181970
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