4 May 2015 Laser-induced damage of GaAs/Ge solar cells by 532nm laser
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Proceedings Volume 9543, Third International Symposium on Laser Interaction with Matter; 95430I (2015) https://doi.org/10.1117/12.2181158
Event: Third International Symposium on Laser Interaction with Matter, 2014, Jiangsu, China
Abstract
Single-heterogeneous junction GaAs/Ge solar cells induced by 532nm laser with the pulse width of 12ns are investigated. Results indicate that the GaAs/Ge solar cells would mostly be damaged when laser is focused on its grid lines. Its surface damage morphology initially occurs at 0.35J/cm2 by the single laser pulse with nanosecond duration. Theoretically, the nanosecond laser pulse leaded damage mainly comes from both the thermal and the mechanical effects. These experimental conclusions are tested and verified by scanning electron microscope with energy dispersive spectroscopy and X-ray photoelectron spectroscopy.
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Rongzhen Zhu, Rongzhen Zhu, Rui Wang, Rui Wang, Xiangai Cheng, Xiangai Cheng, } "Laser-induced damage of GaAs/Ge solar cells by 532nm laser", Proc. SPIE 9543, Third International Symposium on Laser Interaction with Matter, 95430I (4 May 2015); doi: 10.1117/12.2181158; https://doi.org/10.1117/12.2181158
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