4 May 2015 Edge-emitting diode lasers with narrow circular beam output
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Proceedings Volume 9543, Third International Symposium on Laser Interaction with Matter; 95431D (2015) https://doi.org/10.1117/12.2182314
Event: Third International Symposium on Laser Interaction with Matter, 2014, Jiangsu, China
Abstract
We report near circular beam output from 808 nm edge-emitting diode lasers based on Bragg reflection waveguide design. Increasing quantum well number combined with reducing defect layer index and thickness was used to achieve high power output and extremely low vertical far field divergence. The TQW-BRLs achieve the lowest vertical divergence of 4.91° (full width at half maximum) and 9.8° (95% power). The maximum power of 4.6 W was achieved in the mounted DQW-BRL device under continuous-wave operation, being limited by thermal rollover.
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Lijie Wang, Lijie Wang, Cunzhu Tong, Cunzhu Tong, Yugang Zeng, Yugang Zeng, Yongqiang Ning, Yongqiang Ning, Lijun Wang, Lijun Wang, } "Edge-emitting diode lasers with narrow circular beam output", Proc. SPIE 9543, Third International Symposium on Laser Interaction with Matter, 95431D (4 May 2015); doi: 10.1117/12.2182314; https://doi.org/10.1117/12.2182314
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