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31 August 2015 Fabrication and characterization of near thresholdless lasers at room temperature
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Abstract
In this work we report room temperature (RT) continuous wave (c.w.) lasing at 1.3 μm in photonic crystal microcavities with a single layer of self-assembled InAsSb quantum dots (QDs) embedded in a photonic crystal microcavity. The laser exhibited ultra–low power threshold (860 nW) and high efficiency (β=0.85), thus operating in the near thresholdless regime. The results open up a wide range of opportunities for room temperature applications of ultra–low threshold lasers, such as integrated photonic circuitry or high sensitivity biosensors.
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I. Prieto, J. M. Llorens, L. E. Muñoz-Camúñez, C. Robles, A. G. Taboada, J. Canet-Ferrer, J. M. Ripalda, G. Muñoz-Matutano, J. P. Martínez-Pastor, and P. A. Postigo "Fabrication and characterization of near thresholdless lasers at room temperature", Proc. SPIE 9546, Active Photonic Materials VII, 95460D (31 August 2015); https://doi.org/10.1117/12.2190097
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