Translator Disclaimer
Presentation + Paper
31 August 2015 Second order nonlinearity in Si by inhomogeneous strain and electric fields
Author Affiliations +
Abstract
The lack of a dipolar second order susceptibility (χ(2)) in silicon due to its centro-symmetric diamond lattice usually inhibits efficient second order nonlinear optical processes in the silicon bulk. Depositing stressed silicon nitride layers or growing a thermal oxide layer introduces an inhomogeneous strain into the silicon lattice and breaks the centro-symmetry of its crystal structure thereby creating a χ(2). This causes enhanced second harmonic generation and was observed in reflection and transmission measurements for wavelengths in the infrared. However strain is not the only means to break the structures symmetry. Fixed charges at the silicon nitride/silicon interface cause a high electric field close to the silicon interface which causes electric-field-induced-second-harmonic (EFISH) contributions too. The combination of both effects leads to χ(2) values which are estimated to be of the order as classic χ(2) materials like KDP or LiNiO3. This paves the way for the exploitation of other second order nonlinear processes in the area of silicon photonics and is an example how fundamental optical properties of materials can be altered by strain.
Conference Presentation
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jörg Schilling, Clemens Schriever, Federica Bianco, Massimo Cazzanelli, and Lorenzo Pavesi "Second order nonlinearity in Si by inhomogeneous strain and electric fields", Proc. SPIE 9546, Active Photonic Materials VII, 95461T (31 August 2015); https://doi.org/10.1117/12.2190136
PROCEEDINGS
7 PAGES + PRESENTATION

SHARE
Advertisement
Advertisement
RELATED CONTENT

Harmonic generation in 2D layered materials
Proceedings of SPIE (September 17 2014)
Hybrid vertical-cavity laser integration on silicon
Proceedings of SPIE (February 25 2017)
Multicomponent dielectrics for oxide TFT
Proceedings of SPIE (March 01 2012)
InP overgrowth on SiO2 for active photonic devices on silicon
Proceedings of SPIE (February 12 2010)

Back to Top