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5 October 2015 Observation of Fano resonances in highly doped semiconductors plasmonic resonators (Presentation Recording)
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Abstract
All-semiconductor plasmonics gives the opportunity to build new plasmonic structures with embedded resonators of highly doped semiconductor (HDSC) in a matrix of un-doped semiconductor for mid-IR applications. In this work, we report on the excitation of Fano resonances in the mid-infrared range using plasmonic resonators based on HDSC. Using adequate semiconductors, InAsSb and GaSb grown by molecular beam epitaxy (MBE), we have designed the right structure to obtain the expected optical properties. The samples are lattice matched to the GaSb substrate which offers the possibility to integrate the plasmonic resonators at the heart of photonic devices. The embedded nanostructures have been studied by high-resolution transmission electron-microscopy (HR-TEM) to accurately retrieve the geometrical parameters of the resonator. These actual geometrical parameters have then been used to model the optical properties of the HDSC resonators by the FDTD technique and a model based on Fano resonances. Excellent agreement has been achieved between simulation and experiments. We show that it is possible to control the optical properties of the plasmonic resonators by adjusting their geometrical parameters or the doping level of the HDSC. This work demonstrates the possibility to develop all-semiconductor plasmonics for photonic applications in the mid-IR range.
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Thierry Taliercio, Vilianne Ntsame Guilengui, Jean-Baptiste Rodriguez, Laurent Cerutti, and Eric Tournié "Observation of Fano resonances in highly doped semiconductors plasmonic resonators (Presentation Recording)", Proc. SPIE 9547, Plasmonics: Metallic Nanostructures and Their Optical Properties XIII, 954715 (5 October 2015); https://doi.org/10.1117/12.2188125
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