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5 October 2015 Development of micronic GMR-magnetoresistive sensors for non-destructive sensing applications (Presentation Recording)
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Abstract
We will present our last development of GMR-based magnetic sensors devoted to sensing application for non-destructive control application. In these first realizations, we have chosen a so-called shape anisotropy - exchange biased strategy to fulfill the field-sensing criteria in the μT range in devices made of micronic single elements. Our devices realized by optical lithography, and whose typical sizes range from 150 μm x 150 μm to 500 μm x 500 μm elements, are made of trilayers GMR-based technology and consist of several circuitries of GMR elements of different lengths, widths and gaps. To obtain a full sensing linearity and reversibility requiring a perpendicular magnetic arrangement between both sensitive and hard layer, the magnetization of the latter have been hardened by pinning it with an antiferromagnetic material. The specific geometry of the design have been engineered in order to optimize the magnetic response of the soft layer via the different magnetic torques exerted on it essentially played by the dipolar fields or shape anisotropy, and the external magnetic field to detect. The smaller dimensions in width and in gap are then respectively of 2 μm and 3 μm to benefit of the full shape anisotropy formatting the magnetic response.
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Henri Jaffrès, Yves LeMaitre, Sophie Collin, Frédéric Nguyen Vandau, Natalia Sergeeva-Chollet, and Jean-Marc Decitre "Development of micronic GMR-magnetoresistive sensors for non-destructive sensing applications (Presentation Recording)", Proc. SPIE 9551, Spintronics VIII, 95512G (5 October 2015); https://doi.org/10.1117/12.2187451
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