16 September 2015 Engineering catalytic activity via ion beam bombardment of catalyst supports for vertically aligned carbon nanotube growth
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Abstract
Carbon nanotube growth depends on the catalytic activity of metal nanoparticles on alumina or silica supports. The control on catalytic activity is generally achieved by variations in water concentration, carbon feed, and sample placement on a few types of alumina or silica catalyst supports obtained via thin film deposition. We have recently expanded the choice of catalyst supports by engineering inactive substrates like c-cut sapphire via ion beam bombardment. The deterministic control on the structure and chemistry of catalyst supports obtained by tuning the degree of beam-induced damage have enabled better regulation of the activity of Fe catalysts only in the ion beam bombarded areas and hence enabled controllable super growth of carbon nanotubes. A wide range of surface characterization techniques were used to monitor the catalytically active surface engineered via ion beam bombardment. The proposed method offers a versatile way to control carbon nanotube growth in patterned areas and also enhances the current understanding of the growth process. With the right choice of water concentration, carbon feed and sample placement, engineered catalyst supports may extend the carbon nanotube growth yield to a level that is even higher than the ones reported here, and thus offers promising applications of carbon nanotubes in electronics, heat exchanger, and energy storage.
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A. E. Islam, A. E. Islam, P. Nikolaev, P. Nikolaev, P. B. Amama, P. B. Amama, D. Zakharov, D. Zakharov, G. Sargent, G. Sargent, S. Saber, S. Saber, D. Huffman, D. Huffman, M. Erford, M. Erford, S. L. Semiatin, S. L. Semiatin, E. A. Stach, E. A. Stach, B. Maruyama, B. Maruyama, } "Engineering catalytic activity via ion beam bombardment of catalyst supports for vertically aligned carbon nanotube growth", Proc. SPIE 9552, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII, 955206 (16 September 2015); doi: 10.1117/12.2187052; https://doi.org/10.1117/12.2187052
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