16 September 2015 Capturing the effect of long low-temperature anneals on the sub-bandgap defect structure of CZTSSe
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Abstract
In this study, Cu2ZnSn(S,Se)4 (CZTSSe) thin films are subjected to long, low-temperature annealing treatments which have been suggested to bring the material through an “order/disorder” transition. The samples are then characterized by intensity-dependence photoluminescence measurements at low temperature. We observe that annealing the films at 150°C for 1 day causes a shift in the sub-band gap (Eg) states towards higher photon energies. One week of annealing appears to result in a similar electronic structure as 1 day of annealing, and therefore the measurements performed after 1 day roughly represents the equilibrium (kinetically-limited) defect structure for this temperature. Importantly, all samples measured in this study display strong recombination through deep states up to ~330 meV below the band gap. Therefore, while some improvements are observed to occur after long low-temperature annealing, we find that this approach does not fully remedy the band tailing states found to limit the Voc in CZTSSe thin film photovoltaics.
Conference Presentation
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Talia Gershon, Talia Gershon, Doug Bishop, Doug Bishop, Brian McCandless, Brian McCandless, Wei Wang, Wei Wang, Richard Haight, Richard Haight, } "Capturing the effect of long low-temperature anneals on the sub-bandgap defect structure of CZTSSe", Proc. SPIE 9552, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII, 955209 (16 September 2015); doi: 10.1117/12.2186658; https://doi.org/10.1117/12.2186658
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