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16 September 2015 Tin disulfide thin films via soft chalcogenization
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Abstract
Tin disulfide displays a wide range of attractive physical and chemical properties and are potentially important for various device applications including nanoelectronics, optoelectronics, as well as energy conversion. Here, we report on the largescale synthesis of tin disulfide granular thin films on silicon dioxide substrates by soft chalcogenization method in which the pre-deposited tin thin films are transformed into tin disulfide thin films via exposure to sulfur vapor. The obtained tin disulfide films have been comprehensively characterized to study their fundamental properties in detail by using atomic force microscopy, scanning electron microcopy, Raman spectroscopy, photoluminescence spectroscopy and X-ray photoelectron spectroscopy.
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Zafer Mutlu, Mihrimah Ozkan, and Cengiz S. Ozkan "Tin disulfide thin films via soft chalcogenization", Proc. SPIE 9552, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII, 95520N (16 September 2015); https://doi.org/10.1117/12.2190598
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