Flexible and stackable non-volatile resistive memory for high integration

Shawkat Ali; Jinho Bae; Chong Hyun Lee

doi:10.1117/12.2190399

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26 August 2015 Flexible and stackable non-volatile resistive memory for high integration

Shawkat Ali, Jinho Bae, Chong Hyun Lee

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Proceedings Volume 9553, Low-Dimensional Materials and Devices; 95530T (2015) https://doi.org/10.1117/12.2190399
Event: SPIE Nanoscience + Engineering, 2015, San Diego, California, United States

Abstract

We propose a novel flexible and stackable resistive random access memory (ReRAM) array with multi-layered crossbar structures fabricated on a PET flexible substrate through EHD system. The basic memory block of the proposed device is based on one resistor and multi-layered column memristors (1R-MCM) structure, which can be easily extended to 3 dimensional columns for a high integration. To fabricate the device, the materials Ag for top and bottom electrodes, PVP for memristor, and (MEH:PPV and PMMA in acetonitrile) for pull-up resistors are used. Memory single cell is consisted of a high OFF/ON ratio (~4663) memristor and a pull-up resistor (20 MΩ) that operate on the principles of voltage divider circuit. Memory logic data is retrieve in the form of voltage levels instead of sensing current the of crossbar array. Two memory crossbar arrays are stacked vertically and they are sharing column bars, each column’s memristors are with a single pull-up resistor. A 3x3 stacked memory with two layers that can store 18 bits of data is demonstrated to realize on a small area for a high integration.

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Shawkat Ali, Jinho Bae, and Chong Hyun Lee "Flexible and stackable non-volatile resistive memory for high integration", Proc. SPIE 9553, Low-Dimensional Materials and Devices, 95530T (26 August 2015); https://doi.org/10.1117/12.2190399

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