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5 October 2015 Extended defect structures observed in (AlxGa1-x)0.5In0.5P light emitting diodes grown by MOVPE (Presentation Recording)
Andreas Rudolph
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Proceedings Volume 9553, Low-Dimensional Materials and Devices; 95530W (2015) https://doi.org/10.1117/12.2191527
Event: SPIE Nanoscience + Engineering, 2015, San Diego, California, United States
Abstract
Scanning transmission electron microscopy (STEM) annular dark field (ADF), high angle annular dark field (HAADF), cathodoluminescence (CL) and energy-dispersive X-ray spectroscopy (EDX) analysis were carried out to investigate the structural and optical properties of (AlxGa1-x)0.5In0.5P light emitting diodes (LEDs). Extended defect structures were observed in the LED active region, which exhibit defect emission that is shifted by 0.25 eV relative to the multi quantum well (MQW) emission. The morphology and composition of the defect structures was elucidated and the results confirmed by growth experiments and photoluminescence (PL) measurements.
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Andreas Rudolph "Extended defect structures observed in (AlxGa1-x)0.5In0.5P light emitting diodes grown by MOVPE (Presentation Recording)", Proc. SPIE 9553, Low-Dimensional Materials and Devices, 95530W (5 October 2015); https://doi.org/10.1117/12.2191527
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KEYWORDS
Light emitting diodes
Scanning transmission electron microscopy
Luminescence
Optical properties
Quantum wells
Spectroscopy
X-ray microscopy
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