28 August 2015 Superlattice infrared photodetector research at the Jet Propulsion Laboratory
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Abstract
III-V semiconductors offer a highly effective platform for the development of sophisticated heterostructure-based MWIR and LWIR detectors, as exemplified by the high-performance double heterstructure (DH) nBn, XBn, and type- II superlattice infrared detectors. A key enabling design element is the unipolar barrier, which is used to implement the complementary barrier infra-red detector (CBIRD) design for increasing the collection efficiency of photogenerated carriers, and reducing dark current generation without impeding photocurrent flow. Heterostructure superlattice detectors that make effective use of unipolar barriers have demonstrated strong reduction of generationrecombination (G-R) dark current due to Shockley-Read-Hall (SRH) processes. In the last several years we solely focused on the development of antimonide based IR detectors. Recently, we demonstrated RoA values over 14,000 Ohm cm2 for a 9.9 μm cutoff device by incorporating electron-blocking and hole-blocking unipolar barriers. This device has shown 300K BLIP operation with f/2 optics at 87 K with blackbody * of 1.1x1011 cm Hz1/2/W.
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S. D. Gunapala, D. Z. Ting, S. B. Rafol, A. Soibel, A. Khoshakhlagh, C. J. Hill, L. Höglund, S. A. Keo, J. K. Liu, J. M. Mumolo, E. M. Luong, A. Fisher, "Superlattice infrared photodetector research at the Jet Propulsion Laboratory", Proc. SPIE 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 955503 (28 August 2015); doi: 10.1117/12.2188724; https://doi.org/10.1117/12.2188724
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