28 August 2015 Si based mid-infrared GeSn photo detectors and light emitters
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In this work, high performance GeSn photoconductor and light emitting diodes (LED) have been demonstrated. For the photoconductor, the high responsivity was achieved due to high photoconductive gain, which is attributed to the novel optical and electrical design. The longwave cutoff at 2.4 μm was also observed at room temperature. For LED, temperature-dependent study was conducted. The electroluminescence (EL) spectra at different temperatures were obtained and EL peak shift was observed. Moreover, the emission power at different temperatures was measured. High power emission at 2.1 μm was achieved.
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Wei Du, Wei Du, Thach Pham, Thach Pham, Joe Margetis, Joe Margetis, Huong Tran, Huong Tran, Seyed A. Ghetmiri, Seyed A. Ghetmiri, Aboozar Mosleh, Aboozar Mosleh, Greg Sun, Greg Sun, Richard A. Soref, Richard A. Soref, John Tolle, John Tolle, Hameed A. Naseem, Hameed A. Naseem, Baohua Li, Baohua Li, Shui-Qing Yu, Shui-Qing Yu, } "Si based mid-infrared GeSn photo detectors and light emitters", Proc. SPIE 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 95550E (28 August 2015); doi: 10.1117/12.2187540; https://doi.org/10.1117/12.2187540


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