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5 October 2015 Infrared detectors based on InAs/GaSb superlattice materials (Presentation Recording)
Sanjay Krishna
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Proceedings Volume 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications; 95550O (2015) https://doi.org/10.1117/12.2190280
Event: SPIE Nanoscience + Engineering, 2015, San Diego, California, United States
Abstract
Heteroengineered structures with unipolar barriers such as nBn, CBIRD, M-structure, N-structure, pBiBn and cascade structures have taken advantage of the unique bandstructure engineering properties of the 6.1A InAs/GaSb/AlSb family. In this talk, I will review some of the approaches that we have developed in our group nBn, pBiBn and interband cascade detectors. The performance characteristics of these detectors will be discussed in detail in the presentation.
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Sanjay Krishna "Infrared detectors based on InAs/GaSb superlattice materials (Presentation Recording)", Proc. SPIE 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 95550O (5 October 2015); https://doi.org/10.1117/12.2190280
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KEYWORDS
Infrared detectors
Sensors
Superlattices
Current controlled current source
Nanostructuring
Optical imaging
Optical sensing
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