20 August 2015 Design of optical channel waveguides in SiO2 by ion implantation
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Design of straight and S-bend optical channel waveguides based on silver ion implantation in SiO2 substrates is presented. 3D Beam Propagation Method (BPM) calculations are used for the design of the waveguides based on step index profiles produced from a sequential multiple ion implantation process. An analysis of modal optical confinement was done by means of the Effective Index Method (EIM) for selecting the right dimensions of the channel waveguides. Core index values between 1.4623-1.4662 are obtained, depending on the fluence, are considered. Depth and width for the waveguides were chosen to provide single mode operation. Bending losses are determined as function of bending radius, refractive index change (Δn), and wavelength.
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H. De los Reyes, H. De los Reyes, E. G. Lizarraga-Medina, E. G. Lizarraga-Medina, D. Salazar, D. Salazar, R. Rangel-Rojo, R. Rangel-Rojo, G. V. Vázquez, G. V. Vázquez, A. Oliver, A. Oliver, S. Achenbach, S. Achenbach, M. Börner, M. Börner, H. Márquez, H. Márquez, } "Design of optical channel waveguides in SiO2 by ion implantation", Proc. SPIE 9556, Nanoengineering: Fabrication, Properties, Optics, and Devices XII, 955617 (20 August 2015); doi: 10.1117/12.2187117; https://doi.org/10.1117/12.2187117

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