Emitter thickness optimization for GaSb thermophotovoltaic cells grown by molecular beam epitaxy

Shaimaa A. Abdallah; Daniel J. Herrera; Benjamin P. Conlon; Nassim Rahimi; Luke F. Lester

doi:10.1117/12.2187487

23 September 2015 Emitter thickness optimization for GaSb thermophotovoltaic cells grown by molecular beam epitaxy

Shaimaa A. Abdallah, Daniel J. Herrera, Benjamin P. Conlon, Nassim Rahimi, Luke F. Lester

Proceedings Volume 9562, Next Generation Technologies for Solar Energy Conversion VI; 95620L (2015) https://doi.org/10.1117/12.2187487
Event: SPIE Optics + Photonics for Sustainable Energy, 2015, San Diego, California, United States

Abstract

GaSb thermophotovoltaic (TPV) devices were fabricated using a Molecular Beam Epitaxy (MBE) technique. Different emitter thicknesses (de) were studied to maximize the TPV cell’s short circuit current density. In this regard, the fabricated TPV device’s emitter was incrementally wet-etched and characterized to find the optimal thickness value. Simulations were performed using the Crosslight APSYS® platform over the full-spectrum range in order to predict device performance for different designs, while maximizing the photocurrent generation and enhancing the emitter sheet resistance. TPV devices were characterized electrically and optically. These experimental data showed that the etched emitter has minimal impact on the measured short circuit current density (J_sc) while simulated results demonstrated an optimal d_e of 200 nm.

Conference Presentation

Citation Download Citation

Shaimaa A. Abdallah, Daniel J. Herrera, Benjamin P. Conlon, Nassim Rahimi, and Luke F. Lester "Emitter thickness optimization for GaSb thermophotovoltaic cells grown by molecular beam epitaxy", Proc. SPIE 9562, Next Generation Technologies for Solar Energy Conversion VI, 95620L (23 September 2015); https://doi.org/10.1117/12.2187487

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