Investigating photoluminescence quantum yield of silicon nanocrystals formed in SiOx with different initial Si excess

Nguyen Xuan Chung; Rens Limpens; Tom Gregorkiewicz

doi:10.1117/12.2191105

4 September 2015 Investigating photoluminescence quantum yield of silicon nanocrystals formed in SiO_x with different initial Si excess

Nguyen Xuan Chung, Rens Limpens, Tom Gregorkiewicz

Author Affiliations +

Proceedings Volume 9562, Next Generation Technologies for Solar Energy Conversion VI; 95620O (2015) https://doi.org/10.1117/12.2191105
Event: SPIE Optics + Photonics for Sustainable Energy, 2015, San Diego, California, United States

Abstract

Optical properties of silicon nanocrystals dispersed in SiO₂ matrix were investigated in terms of photoluminescence quantum yield at room temperature. Two multilayer samples, prepared from substoichiometric silicon oxide layers by annealing at 1150°C were used to investigate the influence of Si concentration. Significant reduction of photoluminescence quantum yield and a very specific change of its excitation energy dependence upon variation of silicon excess are concluded from the experimental data. Possible mechanisms leading to these changes are discussed.

Conference Presentation

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Nguyen Xuan Chung, Rens Limpens, and Tom Gregorkiewicz "Investigating photoluminescence quantum yield of silicon nanocrystals formed in SiO_x with different initial Si excess", Proc. SPIE 9562, Next Generation Technologies for Solar Energy Conversion VI, 95620O (4 September 2015); https://doi.org/10.1117/12.2191105

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