18 September 2015 Interface trap density effect on efficiency of Fullerene organic Schottky diode
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In order to optimize the device performance it is very important to have knowledge about intrinsic properties, particularly the charge transport and charge injection properties. One of the basic methods to investigate the charge transport in interface metal/organic semiconductors is to determine the dark current density voltage characteristic (J-V), where the important effects which describe that transport mechanism are the space charge, trapping and Schottky effects [1]. The interface trap density effect on dark J-V characteristics of fullerene (C60) Schottky diode is investigated here for different electrodes LiF/Al, Al, Ag and Pt. The C60/LiF/Al interface has been found to exhibit the ohmic interface type junction in C60 electronic only diode. We have a good agreement with the experimental results.
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Mebarka Daoudi, Mebarka Daoudi, Nesrine Mendil, Nesrine Mendil, Zakarya Berkai, Zakarya Berkai, Abderrahmane Belghachi, Abderrahmane Belghachi, } "Interface trap density effect on efficiency of Fullerene organic Schottky diode", Proc. SPIE 9567, Organic Photovoltaics XVI, 95671D (18 September 2015); doi: 10.1117/12.2184291; https://doi.org/10.1117/12.2184291

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