31 August 2015 Gate dielectric surface treatments for performance improvement of poly(3-hexylthiophene-2,5-diyl) based organic field-effect transistors
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Abstract
We report on enhanced performance in poly(3-hexylthiophene-2,5-diyl) (P3HT) based organic field effect transistors (OFETs) achieved by improvement in hole transport along the channel near the insulator/semiconductor (I/S) interface. The improvement in hole transport is demonstrated to occur very close to the I/S interface, after treatment of the insulator layer with sodium dodecyl sulfate (SDS). SDS is an anionic surfactant, with negatively charged heads, known for formation of micelles above critical micelle concentration (CMC), which contribute to the passivation of positively charged traps. Investigation of field-effect mobility (μFET) as a function of channel bottleneck thickness in OFETs reveals the favorable gate voltage regime where mobility is the highest. In addition, it shows that the gate dielectric surface treatment not only leads to an increase in mobility in that regime, but also displaces charge transport closer to the interface, hence pointing toward passivation of the charge traps at I/S interface. OFETs with SDS treatment were compared with untreated and vitamin C or hexadecyltrimethylammonium bromide (CTAB) treated OFETs. All the treatments resulted in significant improvements in specific dielectric capacitance, μFET, on/off current ratio and transconductance.
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Ali Nawaz, Ali Nawaz, Cristiane de Col, Cristiane de Col, Isidro Cruz-Cruz, Isidro Cruz-Cruz, Anshu Kumar, Anshu Kumar, Anil Kumar, Anil Kumar, Ivo A. Hümmelgen, Ivo A. Hümmelgen, } "Gate dielectric surface treatments for performance improvement of poly(3-hexylthiophene-2,5-diyl) based organic field-effect transistors", Proc. SPIE 9568, Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII, 95681A (31 August 2015); doi: 10.1117/12.2187024; https://doi.org/10.1117/12.2187024
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