Flexible non-volatile memory devices based on organic semiconductors

Piero Cosseddu; Giulia Casula; Stefano Lai; Annalisa Bonfiglio

doi:10.1117/12.2187537

17 September 2015 Flexible non-volatile memory devices based on organic semiconductors

Piero Cosseddu, Giulia Casula, Stefano Lai, Annalisa Bonfiglio

Proceedings Volume 9569, Printed Memory and Circuits; 956906 (2015) https://doi.org/10.1117/12.2187537
Event: SPIE Organic Photonics + Electronics, 2015, San Diego, California, United States

Abstract

The possibility of developing fully organic electronic circuits is critically dependent on the ability to realize a full set of electronic functionalities based on organic devices. In order to complete the scene, a fundamental element is still missing, i.e. reliable data storage. Over the past few years, a considerable effort has been spent on the development and optimization of organic polymer based memory elements. Among several possible solutions, transistor-based memories and resistive switching-based memories are attracting a great interest in the scientific community. In this paper, a route for the fabrication of organic semiconductor-based memory devices with performances beyond the state of the art is reported. Both the families of organic memories will be considered. A flexible resistive memory based on a novel combination of materials is presented. In particular, high retention time in ambient conditions are reported. Complementary, a low voltage transistor-based memory is presented. Low voltage operation is allowed by an hybrid, nano-sized dielectric, which is also responsible for the memory effect in the device. Thanks to the possibility of reproducibly fabricating such device on ultra-thin substrates, high mechanical stability is reported.

Conference Presentation

Citation Download Citation

Piero Cosseddu, Giulia Casula, Stefano Lai, and Annalisa Bonfiglio "Flexible non-volatile memory devices based on organic semiconductors", Proc. SPIE 9569, Printed Memory and Circuits, 956906 (17 September 2015); https://doi.org/10.1117/12.2187537

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