Carrier-injection studies in GaN-based light-emitting-diodes

Dinh Chuong Nguyen; David Vaufrey; Mathieu Leroux

doi:10.1117/12.2187078

8 September 2015 Carrier-injection studies in GaN-based light-emitting-diodes

Dinh Chuong Nguyen, David Vaufrey, Mathieu Leroux

Proceedings Volume 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems; 95710J (2015) https://doi.org/10.1117/12.2187078
Event: SPIE Optical Engineering + Applications, 2015, San Diego, California, United States

Abstract

Although p-type GaN has been achieved by Mg doping, the low hole-mobility still remains a difficulty for GaN-based light-emitting diodes (LEDs). Due to the lack of field-dependent-velocity model for holes, in GaN-based LED simulations, the hole mobility is usually supposed to remain constant. However, as the p-GaN-layer conductivity is lower than the n-GaN-layer conductivity, a strong electric-field exists in the p-side of an LED when the applied voltage exceeds the LED’s built-in voltage. Under the influence of this field, the mobilities of electrons and holes are expected to decrease. Based on a field-dependent-velocity model that is usually used for narrow-bandgap materials, an LED structure is modelled with three arbitrarily chosen hole saturation-velocities. The results show that a hole saturation-velocity lower than 4x106 cm/s can negatively affect the LED’s behaviors.

Citation Download Citation

Dinh Chuong Nguyen, David Vaufrey, and Mathieu Leroux "Carrier-injection studies in GaN-based light-emitting-diodes", Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710J (8 September 2015); https://doi.org/10.1117/12.2187078

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