Translator Disclaimer
Paper
8 September 2015 Effect of barrier materials on the polarization field in the active region of blue InGaN LED using Sentaurus
Author Affiliations +
Abstract
This paper addresses the barrier material of the structural design of a blue InGaN light emitting diode (LED) in order to analyze the polarization effect occurred in the active region by carrying out a simulation using Sentaurus Synopsys. It was observed that the traditional GaN barrier had the highest polarization field due to high lattice mismatch between the wells and barriers. When InGaN or AlInGaN were employed as barrier, the band diagram showed a lower polarization effect. This was attributed to the overlapping of electrons and holes wave functions.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karunavani Sarukunaselan, Vithyacharan Retnasamy, Zaliman Sauli, Sarveshvaran Suppiah, Kamarudin Hussin, Steven Taniselass, and Mukhzeer Shahimin "Effect of barrier materials on the polarization field in the active region of blue InGaN LED using Sentaurus", Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710L (8 September 2015); https://doi.org/10.1117/12.2189076
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top