Quantum well thickness variation investigation on optical and thermal performances of GaN LEDs

Karunavani Sarukunaselan; Vithyacharan Retnasamy; Zaliman Sauli; Sarveshvaran Suppiah; Kamarudin Hussin; Steven Taniselass; Mukhzeer Shahimin

doi:10.1117/12.2189082

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8 September 2015 Quantum well thickness variation investigation on optical and thermal performances of GaN LEDs

Karunavani Sarukunaselan, Vithyacharan Retnasamy, Zaliman Sauli, Sarveshvaran Suppiah, Kamarudin Hussin, Steven Taniselass, Mukhzeer Shahimin

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Proceedings Volume 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems; 95710M (2015) https://doi.org/10.1117/12.2189082
Event: SPIE Optical Engineering + Applications, 2015, San Diego, California, United States

Abstract

Blue InGaN LED suffers from a severe efficiency droop at high current density and electron leakage is believed to be one of the primary causes of it. In this study, InGaN LED was simulated using Sentaurus TCAD. The effects of thickness of the quantum wells on the device performances were examined through simulation. Results of the simulations suggested that to achieve a low efficiency droop, the wells have to be thick.

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Karunavani Sarukunaselan, Vithyacharan Retnasamy, Zaliman Sauli, Sarveshvaran Suppiah, Kamarudin Hussin, Steven Taniselass, and Mukhzeer Shahimin "Quantum well thickness variation investigation on optical and thermal performances of GaN LEDs", Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710M (8 September 2015); https://doi.org/10.1117/12.2189082

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