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8 September 2015 Quantum barrier thickness study on blue InGaN LED optical performance using Sentaurus
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Abstract
Blue InGaN LEDs have a drawback whereby it suffers from efficiency droop at high current injection levels. One of the major factors of this droop behaviour is contributed by electron leakage. The aim of this study was to suppress electron leakage in the device by understanding how barrier thickness affects the carrier distribution in the device as well as the device performances. Simulation results obtained showed that thinner barrier increased the device’s efficiency since there was better electron confinement and tunnelling effect.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karunavani Sarukunaselan, Vithyacharan Retnasamy, Zaliman Sauli, Sarveshvaran Suppiah, Kamarudin Hussin, Steven Taniselass, and Mukhzeer Shahimin "Quantum barrier thickness study on blue InGaN LED optical performance using Sentaurus", Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710Q (8 September 2015); https://doi.org/10.1117/12.2189081
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