8 September 2015 High performance GaN based blue flip-chip light-emitting diodes
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Abstract
In this study, high performance nitride-based flip-chip (FC) light-emitting diodes (LEDs) using optimized distributed bragg reflector (DBR) were fabricated and compared with conventional FC-LED using silver (Ag) reflector. Most of FCLEDs are using the silver (Ag) as reflector due to its superior reflectance at visual spectrum region. However, A silver has detrimental problems such as electro-chemical migration and agglomerations, which resulting in reliability issues such as degradation of power drop, unstable operating voltage and leakage issues. Our DBR structure was designed to have 99% at whole visible spectrum range (400~750nm), which is higher reflectance than silver reflector (90~95%). Optical power is higher than higher than the Ag-LED up to 30% @ 500mA. As the current increases up to 1A, the gap slightly decreased. Reliability test results show stable optical power, operating voltage, and leakage maintenance.
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G.M. Jin, G.M. Jin, I.G. Choi, I.G. Choi, J.C. Park, J.C. Park, S.K. Jeon, S.K. Jeon, E.H. Park, E.H. Park, } "High performance GaN based blue flip-chip light-emitting diodes", Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710S (8 September 2015); doi: 10.1117/12.2185915; https://doi.org/10.1117/12.2185915
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