8 September 2015 Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes
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Abstract
We present results from a combined experimental and numerical investigation of trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes. We show that the excess forward leakage current in single-quantum-well InGaN/GaN light-emitting diodes can be explained by non-local tunneling-into-traps processes and subsequent non-radiative recombination with free carriers.
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M. Mandurrino, M. Mandurrino, M. Goano, M. Goano, S. Dominici, S. Dominici, M. Vallone, M. Vallone, F. Bertazzi, F. Bertazzi, G. Ghione, G. Ghione, M. Bernabei, M. Bernabei, L. Rovati, L. Rovati, G. Verzellesi, G. Verzellesi, M. Meneghini, M. Meneghini, G. Meneghesso, G. Meneghesso, E. Zanoni, E. Zanoni, } "Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes", Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710U (8 September 2015); doi: 10.1117/12.2187443; https://doi.org/10.1117/12.2187443
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