31 August 2015 Relativistic Doppler frequency up-conversion of terahertz pulses via reflection from photo-induced plasma fronts in solid-state media
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Proceedings Volume 9585, Terahertz Emitters, Receivers, and Applications VI; 95850G (2015); doi: 10.1117/12.2186752
Event: SPIE Optical Engineering + Applications, 2015, San Diego, California, United States
Abstract
We have recently proposed and investigated the use of the relativistic Doppler reflection to up-shift the frequency of incident THz pulses, where the reflecting boundary is realized by a charge-carrier plasma front generated by a counter-propagating optical pump pulse in a semiconductor medium. In light of experimental results with high-resistivity silicon as the medium, here we employ numerical simulations to examine the effects of (i) the scattering time and (ii) pre-excitation of the plasma before the main pulse, which both can have a profound impact on the frequency up-conversion. These results also suggest that the initial effective Drude scattering time in silicon (before thermalization) may be below 10 femtoseconds, exemplifying the use of the Doppler reflective geometry as a novel probe of initial charge-carrier dynamics.
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Mark D. Thomson, Fanqi Meng, Hartmut G. Roskos, "Relativistic Doppler frequency up-conversion of terahertz pulses via reflection from photo-induced plasma fronts in solid-state media", Proc. SPIE 9585, Terahertz Emitters, Receivers, and Applications VI, 95850G (31 August 2015); doi: 10.1117/12.2186752; http://dx.doi.org/10.1117/12.2186752
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KEYWORDS
Terahertz radiation

Doppler effect

Plasma

Scattering

Silicon

Semiconductors

Finite-difference time-domain method

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