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26 August 2015 Improve the light power of InP based 100nm tunable AMQW lasers using forced electrical confinement method
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Abstract
100 nm Broadly tunable InGaAsP/InP asymmetric multiple quantum well (AMQW) ridge waveguide laser diodes has limited applications because of its low output power problem. The current injection efficiency of such lasers in average is 18 %. A FlexPDE simulation model showed that the main reason for this poor current injection efficiency is the ridge structure. Since the ridge structure is an essential part of these type of laser diodes, we proposed a forced electrical confinement method to improve current injection efficiency of these lasers. The simulation data for the proposed method showed that it is possible to increase the current injection efficiency up to 90 %. The simulation data also, showed a reduction of nearly 10°C in the maximum temperature of these devices compared with original AMQW devices. This temperature improvement is significant and can lead to a significant improvement of the laser output power. Experimental data however, give less optimistic results. The experimental data did show improvement in the current injection efficiency but also showed creation of recombination centers that reduce the temperature and power improvement. The proposed method can be efficient but a passivation technique needs to be developed for these devices.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hesham M. Enshasy "Improve the light power of InP based 100nm tunable AMQW lasers using forced electrical confinement method", Proc. SPIE 9586, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IX, 95860F (26 August 2015); https://doi.org/10.1117/12.2187783
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