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26 August 2015 Sputtered germanium/silicon devices for photonics applications
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Abstract
We report on the ongoing investigation of magnetron sputtered germanium on silicon for photonics applications. Direct current (DC) magnetron sputtering has been used to deposit germanium layers on silicon at low growth temperatures and medium range vacuum levels. Standard photolithography has been used to make germanium photodetectors for the 1550 nm wavelength range. Electrical characterization, more specifically current-voltage measurements indicate that the devices function as intended. Sputtered silicon waveguides have also been fabricated and evaluated for possible applications in photonics integration. The sputtering-based developments in our present research are expected to provide for a flexible and economically viable manufacturing process for such devices.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Nujhat, J.-P. Papouloute, M. DeBerry, L. Jiang, and N. S. Korivi "Sputtered germanium/silicon devices for photonics applications", Proc. SPIE 9586, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IX, 95861B (26 August 2015); https://doi.org/10.1117/12.2189761
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