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26 August 2015 Memristor memory element based on ZnO thin film structures
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Abstract
The memristor element for random access memory (resistance random access memory - ReRAM) was developed and investigated. The developed structure consists of a Schottky diode (1D) based on Pt/ZnO:Ga/ZnO/Pt heterostructure and a memristor (1R) based on Pt/ZnO:Ga/ZnO/ZnO:Li/Pt heterostructure. Thus the unipolar memristor memory element of 1D1R type was obtained. The heterostructures were produced by the electron-beam vacuum deposition method. The laboratory samples of the memory elements were prepared and their characteristics were studied. The proposed device has a high stability and withstands 1000 switching cycles without derating.
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A. R. Poghosyan, E. Y. Elbakyan, R. Guo, and R. K. Hovsepyan "Memristor memory element based on ZnO thin film structures", Proc. SPIE 9586, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IX, 95861C (26 August 2015); doi: 10.1117/12.2190111; https://doi.org/10.1117/12.2190111
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