26 August 2015 High-reflectance La/B-based multilayer mirror for 6.x-nm wavelength
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For future photolithography processes, the wavelength of 6 nm may offer improved imaging specs. The perspective of this technology however, will depend critically on the performance of multilayer reflective mirrors, which are likely to be based on La/B. One of the issues is formation of LaxBy compounds at the interfaces, which decreases the optical contrast and reduce the reflectivity. To prevent such chemical interaction, passivation of La by nitrogen has been investigated. We successfully synthesized LaN layers that resulted in a new world record reflectivity of 64% at 6.6 nm at near normal incidence. This reduces the gap to the target of 70%, desired for a next generation lithography.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitry Kuznetsov, Dmitry Kuznetsov, Andrey Yakshin, Andrey Yakshin, Marko Sturm, Marko Sturm, Robbert van de Kruijs, Robbert van de Kruijs, Eric Louis, Eric Louis, Fred Bijkerk, Fred Bijkerk, } "High-reflectance La/B-based multilayer mirror for 6.x-nm wavelength", Proc. SPIE 9588, Advances in X-Ray/EUV Optics and Components X, 958806 (26 August 2015); doi: 10.1117/12.2199427; https://doi.org/10.1117/12.2199427


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