28 August 2015 Semi-insulating GaAs and Au Schottky barrier photodetectors for near-infrared detection (1280 nm)
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Abstract
Schottky barriers formed between metal (Au) and semiconductor (GaAs) can be used to detect photons with energy lower than the bandgap of the semiconductor. In this study, photodetectors based on Schottky barriers were fabricated and characterized for the detection of light at wavelength of 1280 nm. The device structure consists of three gold fingers with 1.75 mm long and separated by 0.95 mm, creating an E shape while the middle finger is disconnected from the outer frame. When the device is biased, electric field is stretched between the middle finger and the two outermost electrodes. The device was characterized by measuring the current-voltage (I-V) curve at room temperature. This showed low dark current on the order of 10-10 A, while the photocurrent was higher than the dark current by four orders of magnitude. The detectivity of the device at room temperature was extracted from the I-V curve and estimated to be on the order of 5.3x1010 cm.Hz0.5/W at 5 V. The step response of the device was measured from time-resolved photocurrent curve at 5 V bias with multiple on/off cycles. From which the average recovery time was estimated to be 0.63 second when the photocurrent decreases by four orders of magnitude, and the average rise time was measured to be 0.897 second. Furthermore, the spectral response spectrum of the device exhibits a strong peak close to the optical communication wavelength (~1.3 μm), which is attributed to the internal photoemission of electrons above the Schottky barrier formed between Au and GaAs.
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A. I. Nusir, A. I. Nusir, Y. F. Makableh, Y. F. Makableh, O. Manasreh, O. Manasreh, } "Semi-insulating GaAs and Au Schottky barrier photodetectors for near-infrared detection (1280 nm)", Proc. SPIE 9609, Infrared Sensors, Devices, and Applications V, 960903 (28 August 2015); doi: 10.1117/12.2184997; https://doi.org/10.1117/12.2184997
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