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28 August 2015 High-responsivity and high-saturation-current Si/Ge uni-traveling-carrier photodetector
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Abstract
A Ge-on-SOI uni-traveling carrier (UTC) photodetector was reported for high-power high-speed applications. The performances, in terms of dark-current, photocurrent responsivity and 3-dB bandwidth, were characterized for analog and coherent communications applications. The responsivity was 0.18 A/W at 1550 nm. The detector with a 40μmdiameter demonstrated an optical bandwidth of 2.72 GHz at -5V for 1550nm. The -1dB compression photocurrent at 1 GHz under -7V for 40μm-diameter device was about 16.24mA, the RF output power came to be 4.6 dBmw.
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Chong Li, ChunLai Xue, Zhi Liu, Hui Cong, Xia Guo, and Buwen Cheng "High-responsivity and high-saturation-current Si/Ge uni-traveling-carrier photodetector", Proc. SPIE 9609, Infrared Sensors, Devices, and Applications V, 960908 (28 August 2015); https://doi.org/10.1117/12.2186742
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