28 August 2015 Mid-infrared GeTe4 waveguides on silicon with a ZnSe isolation layer
Author Affiliations +
Abstract
GeTe4 waveguides were designed and fabricated on silicon substrates with a ZnSe isolation layer. GeTe4 has a refractive index of 3.25 at a wavelength of 9 μm and a lower refractive index isolation layer is needed to realise waveguides on silicon. Numerical modelling was carried out to calculate the thickness of the isolation layer (ZnSe, refractive index ~2.4) required to achieve low loss waveguides. For a loss between 0.1 and 1.0 dB/cm it was found that a ~ 4 μm thick ZnSe film is required at a wavelength of 9 μm. ZnSe thin films were deposited on silicon, GeTe4 waveguides were fabricated by lift-off technique and were characterised for mid-infrared waveguiding.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vinita Mittal, Vinita Mittal, Chris Craig, Chris Craig, Neil P. Sessions, Neil P. Sessions, Daniel W. Hewak, Daniel W. Hewak, James S. Wilkinson, James S. Wilkinson, Ganapathy S. Murugan, Ganapathy S. Murugan, } "Mid-infrared GeTe4 waveguides on silicon with a ZnSe isolation layer", Proc. SPIE 9609, Infrared Sensors, Devices, and Applications V, 96090P (28 August 2015); doi: 10.1117/12.2196663; https://doi.org/10.1117/12.2196663
PROCEEDINGS
8 PAGES


SHARE
Back to Top